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| MJ21193, MJ21194 Preferred Device Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features * * * * * Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.5 A, 80 V, 1 Second Pb-Free Packages are Available* http://onsemi.com 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 - 65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C x MEXICO YY WW G TO-204AA (TO-3) CASE 1-07 MJ2119x MEXICO YY WWG = 3 or 4 = Assembly Location = Year = Work Week = Pb-Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 0.7 Unit C/W ORDERING INFORMATION Device MJ21193 MJ21193G MJ21194 MJ21194G Package TO-3 TO-3 (Pb-Free) TO-3 TO-3 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray 100 Units / Tray 100 Units / Tray Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (continued) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 4 Publication Order Number: MJ21193/D MJ21193, MJ21194 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatched (Matched pair hFE = 50 @ 5 A/5 V) hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle 2% THD - - fT Cob 4 - 0.8 0.08 - - - - - 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) - - - - 1.4 4 - - - - 2.2 Vdc Vdc 75 IS/b 5 2.5 - - - - Adc VCEO(sus) ICEO IEBO ICEX 250 - - - - - - - 100 100 100 Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit PNP MJ21193 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 VCE = 10 V f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN MJ21194 10 V VCE = 5 V 5V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJ21193, MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 1000 hFE , DC CURRENT GAIN 1000 NPN MJ21194 hFE , DC CURRENT GAIN TJ = 100C 100 25C -25 C VCE = 20 V 10 0.1 TJ = 100C 25C 100 -25 C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 1000 1000 NPN MJ21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25 C TJ = 100C 25C 100 -25 C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V PNP MJ21193 30 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 1.5 A IB = 2 A 1A 0.5 A 35 30 25 20 15 10 5.0 Figure 6. DC Current Gain, VCE = 5 V NPN MJ21194 IB = 2 A 1.5 A 1A I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 0.5 A TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics http://onsemi.com 3 MJ21193, MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25C IC/IB = 10 VBE(sat) NPN MJ21194 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJ21193 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 10 TJ = 25C NPN MJ21194 TJ = 25C 1.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 10 1 SEC 1.0 TC = 25C 0.1 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1000 IC, COLLECTOR CURRENT (AMPS) 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJ21193, MJ21194 10000 TJ = 25C C, CAPACITANCE (pF) Cib C, CAPACITANCE (pF) 10000 TJ = 25C Cib 1000 Cob 1000 Cob f(test) = 1 MHz 100 0.1 1.0 10 100 100 0.1 f(test) = 1 MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT 8.0 W -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 MJ21193, MJ21194 PACKAGE DIMENSIONS TO-204AA (TO-3) CASE 1-07 ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJ21193/D |
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